Thekeychemicalsinwetetchingcanremovethesiliconnitridefilmbychemicalreaction,andachievetherequirementsofgoodstrippingandsubstrateintegrityofthesubstratesurfaceprotectivelayer.Metalions<50ppb,particles:
It can be used to remove metal and organic matter on the surface of silicon wafer, and also can be used for wet etching and final degumming in photolithography. metal ion <50ppt，particle：0.5um<10、0.3um<20、0.2um<100。Hubei Xingfu Electronic Materials Co., Ltd
Aluminum etching solution is composed of several acids mixed according to different ratios, which is the key material of wet etching process to remove Mo Al metal layer on thin film by chemical reaction. Metal ions < 100 ppb.Hubei Xingfu Electronic Materials Co., Ltd
Electron grade tetramethylammonium hydroxide has strong alkalinity. 25% aqueous solution is called alkaline developer. It is mainly used to neutralize and peel off organic acids formed after photoresist exposure, leaving unreacted photoresist pattern. Metal ions < 5ppb.Hubei Xingfu Electronic Materials Co., Ltd
